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| power transistors www.jmnic.com 2SD1271A silicon npn transistors b c e features ?q for power switching. ?q with to-220fa package ?q complement to type 2sb946 absolute maximum ratings tc=25 symbol parameter rating unit v cbo collector to base voltage 150 v v ceo collector to emitter voltage 100 v v ebo emitter to base voltage 7 v i cp peak collector current 15 a i c collector current 7 a p c collector power dissipation 40 w t j junction temperature 150 t stg storage temperature -55~150 to-220fa electrical characteristics tc=25 symbol parameter conditions min typ. max unit i cbo collector cut-off current v cb =100v; i e =0 10 ua i ebo emitter cut-off current v eb =5v; i c =0 50 ua v cbo collector-base breakdown voltage v ceo collector-emitter breakdown voltage i c =10ma; i b =0 100 v v ebo emitter-base breakdown voltage v ce(sat-1) collector-emitter saturation voltages i c =5a; i b =0.25a 0.5 v v ce(sat-2) collector-emitter saturation voltages h fe-1 forward current transfer ratio i c =0.1a; v ce =2v 45 h fe-2 forward current transfer ratio i c =3a; v ce =2v 60 260 v be(sat)1 base-emitter saturation voltages i c =5a; i b =0.25a 1.5 v v be(sat)2 base-emitter saturation voltages f t transition frepuency i c =0.5a; v ce =10v,f=10mhz 30 mhz h fe-2 classification r q p 60-120 90-180 130-260 jjm nic
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